GIANT OSCILLATIONS OF COUPLING STRENGTH ON MO SI MULTILAYERS WITH THECONSTANT THICKNESS OF SEMICONDUCTOR LAYERS/

We report the observation of anisotropy ratio gamma and interlayer cou pling strength oscillations with variation of metal layer thickness on Mo/Si multilayer series with constant Si layer thickness. These oscil lations correlate with previously found oscillations of T-c, R(300)/R( n) and dH(c perpendicular to)/dT. The giant amplitude of gamma oscilla tions makes one to believe that all oscillation effects are due to the variation of the Josephson coupling strength. Possible origin of thes e unusual effects is discussed.