ELECTRON-PHONON-IMPURITY INTERFERENCE IN THIN NBC FILMS - ELECTRON INELASTIC-SCATTERING TIME AND CORRECTIONS TO RESISTIVITY

Citation
Ks. Ilin et al., ELECTRON-PHONON-IMPURITY INTERFERENCE IN THIN NBC FILMS - ELECTRON INELASTIC-SCATTERING TIME AND CORRECTIONS TO RESISTIVITY, Czechoslovak journal of Physics, 46, 1996, pp. 857-858
Citations number
7
Categorie Soggetti
Physics
ISSN journal
00114626
Volume
46
Year of publication
1996
Supplement
2
Pages
857 - 858
Database
ISI
SICI code
0011-4626(1996)46:<857:EIITNF>2.0.ZU;2-E
Abstract
Complex study of transport properties of impure NbC films with the ele ctron mean free path l=0.6-13 nm show the crucial role of the electron -phonon-impurity interference (EPII). In the temperature range 20-70 K we found the interference correction to resistivity proportional to T -2 and to the residual resistivity of the film. Using the comprehensiv e theory of EPII, we determine the electron coupling with transverse p honons and calculate the electron inelastic scattering time. Direct me asurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with t he theory.