We correlate the non-monotonic doping dependence of the penetration de
pth lambda obtained on La2-xSrxCuO4 thin films, with the doping depend
ence of the Cu-63 Knight shift K-s perpendicular to and the electronic
specific heat coefficient gamma obtained on bulk compounds. These dat
a suggest that the increase of lambda in the overdoped regime is relat
ed to a decrease of the superfluid density and that the carriers induc
ed beyond optimum doping do not condense into pairs, but contribute to
decrease the superfluid density which was present at optimum doping.