ANOMALOUS ELECTRIC CHARACTERISTIC OF LA2-XSRXCUO4 AT X=1 4(N)/

Citation
M. Sugahara et al., ANOMALOUS ELECTRIC CHARACTERISTIC OF LA2-XSRXCUO4 AT X=1 4(N)/, Czechoslovak journal of Physics, 46, 1996, pp. 1165-1166
Citations number
7
Categorie Soggetti
Physics
ISSN journal
00114626
Volume
46
Year of publication
1996
Supplement
2
Pages
1165 - 1166
Database
ISI
SICI code
0011-4626(1996)46:<1165:AECOLA>2.0.ZU;2-1
Abstract
The resistivity of LSCO materials drops sharply at x approximate to 4( -n) from low up to room temperature Anomalous dielectric response of L SCO film at (x approximate to 4-n) and (x approximate to 2x4-n) is fou nd along c axis. The capacitance C t of multi-layer structure Pd/LSCO/ STO/Pd increases at the x values exceeding the capacitance CSTO of Pd/ STO/Pd structure from low to room temperature, where effective dielect ric constant of the conductive normal state is considered to be negati ve. The C-V measurement reveals the existence of ''critical voltage'' in the anomalous dielectric property.