MICRO-DISCHARGE AT STRIP EDGE OF SILICON MICROSTRIP SENSORS

Authors
OHSUGI T IWATA Y OHYAMA H OHMOTO T YOSHIKAWA M HANDA T KURINO K FUJITA K TAMURA N HATAKENAKA T MAEOHMICHI M TAKAHATA M NAKAO M ASAI M KIMURA A TAKASHIMA R YAMAMOTO K YAMAMURA K
Citation
T. Ohsugi et al., MICRO-DISCHARGE AT STRIP EDGE OF SILICON MICROSTRIP SENSORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 383(1), 1996, pp. 116-122
Citations number
13
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
383
Issue
1
Year of publication
1996
Pages
116 - 122
Database
ISI
SICI code
0168-9002(1996)383:1<116:MASEOS>2.0.ZU;2-5
Abstract
We have investigated the micro-discharge (micro-breakdown) phenomenon which is potentially a serious problem in operating in a high radiatio n environment. Numerical calculation of field strength for the model s tructure of the microstrip sensor gives us a quantitative understandin g of each different cause of micro-discharge. The structure of the mic rostrip sensor can be optimized through this field calculation for sup pressing the micro-discharge. We propose a new strip structure to supp ress the micro-discharge.