PROTON IRRADIATION ON P-BULK SILICON STRIP DETECTORS USING 12 GEV PS AT KEK

P-bulk n-strip silicon strip detectors were irradiated with a 12 GeV p roton beam at the KEK Proton Synchrotron in order to investigate a rad iation damage due to high fluence of high energy protons. Primary 12 G eV protons extracted at the EP1-A beam line was used for the irradiati on. The detectors were irradiated with the fluences of 1.1 x 10(14) an d 4.3 x 10(13) protons/cm(2) for the high and low fluence exposures, r espectively. Bias voltage for achieving the full depletion of the irra diated p-bulk detectors was observed to be significantly higher than t hat for the n-bulk detectors. The full depletion voltage did not incre ase monotonically as the fluence increased; it showed little variation up to about 5 x 10(13) p/cm(2) and then started to increase. The beha viour could be explained by assuming a contribution from three process es: effective acceptor creation, persistent acceptor component, and ac ceptor removal.