ELECTROPLASTIC BEHAVIOR OF DOPED POLY(3-HEXYLTHIOPHENE)

Authors
Citation
T. Shiga et A. Okada, ELECTROPLASTIC BEHAVIOR OF DOPED POLY(3-HEXYLTHIOPHENE), Journal of applied polymer science, 62(6), 1996, pp. 903-910
Citations number
22
Categorie Soggetti
Polymer Sciences
ISSN journal
00218995
Volume
62
Issue
6
Year of publication
1996
Pages
903 - 910
Database
ISI
SICI code
0021-8995(1996)62:6<903:EBODP>2.0.ZU;2-4
Abstract
Dynamic viscoelasticity of poly(3-hexylthiophene) (P3HT) doped with io dine or FeCl3 under the influence of electric fields was studied. The doped P3HTs underwent a large decrease in elastic modulus under small electric fields on the order of 1 dc V/mm. The electric fields enhance d the loss tangent. The glass transition temperature decreased as the intensity of the applied fields was increased. This electroplastic beh avior was observed also in ac excitation of less than 1 kHz. Tt was de tected in both crystalline and amorphous P3HTs. Joule heating was a ma in process in the electroplastic behavior of doped P3HTs. We measured FTIR and X-ray diffraction spectra under electric fields to examine th e possibility of other processes. The X-ray diffraction analysis sugge sted a possibility of another process caused by the formation of intra -planar packing of thiophene rings. (C) 1996 John Wiley & Sons, Inc.