BEAM TESTS OF A DOUBLE-SIDED SILICON STRIP DETECTOR WITH FAST BINARY READOUT ELECTRONICS BEFORE AND AFTER PROTON-IRRADIATION

Citation
Y. Unno et al., BEAM TESTS OF A DOUBLE-SIDED SILICON STRIP DETECTOR WITH FAST BINARY READOUT ELECTRONICS BEFORE AND AFTER PROTON-IRRADIATION, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 383(1), 1996, pp. 211-222
Citations number
22
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
ISSN journal
01689002
Volume
383
Issue
1
Year of publication
1996
Pages
211 - 222
Database
ISI
SICI code
0168-9002(1996)383:1<211:BTOADS>2.0.ZU;2-R
Abstract
A double-sided silicon strip detector with a radiation-tolerant design was fabricated and characterized in a sequence of beam tests at KEK u sing 4 GeV/c pions. The detectors were combined with newly designed, f ast, lower power, bipolar amplifier-shaper-discriminator chips and CMO S digital pipeline chips to record hit-no hit signals in the strips. E fficiencies, noise occupancies, and spatial resolutions were measured before and after the proton irradiation at an equivalent fluence of 1 x 10(14) p/cm(2), depending on angle of track incidence and strip-pitc hes. The median pulse height distribution, derived from the threshold scans of the efficiency, allowed to extract the response of the detect or. A 1T magnetic field enabled us to determine the Hall mobilities of electrons and holes.