ZERO-GAP DIRECTIONAL COUPLER SWITCH INTEGRATED INTO A SILICON-ON-INSULATOR FOR 1.3-MU-M OPERATION

A silicon-on insulator (SOI) zero-gap directional coupler switch is st udied based on the large-cross-section single-mode rib waveguide condi tion, the dual-mode interference principle, and the free-carrier plasm a dispersion effect, in which the SOI technique uses silicon and silic on dioxide thermal bonding and backpolishing. The SOI is fabricated by potassium hydroxide anisotropic etching. Its insertion loss and cross talk are measured to be less than 4.81 dB and -18.6 dB, respectively, at a wavelength of 1.3 mu m and a switching voltage of 0.91 V. Respon se time is similar to 210 ns. (C) 1996 Optical Society of America