Cz. Zhao et al., ZERO-GAP DIRECTIONAL COUPLER SWITCH INTEGRATED INTO A SILICON-ON-INSULATOR FOR 1.3-MU-M OPERATION, Optics letters, 21(20), 1996, pp. 1664-1666
A silicon-on insulator (SOI) zero-gap directional coupler switch is st
udied based on the large-cross-section single-mode rib waveguide condi
tion, the dual-mode interference principle, and the free-carrier plasm
a dispersion effect, in which the SOI technique uses silicon and silic
on dioxide thermal bonding and backpolishing. The SOI is fabricated by
potassium hydroxide anisotropic etching. Its insertion loss and cross
talk are measured to be less than 4.81 dB and -18.6 dB, respectively,
at a wavelength of 1.3 mu m and a switching voltage of 0.91 V. Respon
se time is similar to 210 ns. (C) 1996 Optical Society of America