Magnetic properties of Sn1-xGdxTe semimagnetic semiconductor reveal a
strong dependence of antiferromagnetic exchange coupling between Gd sp
ins on the concentration of carriers. We present a model explaining co
nsistently both magnetic and transport properties of SnGdTe as caused
by the resonant adjustment of the energy level of Gd 5d(1) electron st
ates and the Fermi level.