DIFFUSION-PROCESSES RELEVANT TO THE EPITAXIAL-GROWTH OF AG ON AG(110)

Citation
F. Hontinfinde et al., DIFFUSION-PROCESSES RELEVANT TO THE EPITAXIAL-GROWTH OF AG ON AG(110), Surface science, 366(2), 1996, pp. 306-316
Citations number
56
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
366
Issue
2
Year of publication
1996
Pages
306 - 316
Database
ISI
SICI code
0039-6028(1996)366:2<306:DRTTEO>2.0.ZU;2-8
Abstract
By means of quenched molecular dynamics, we have studied the elementar y diffusion processes (intralayer and interlayer diffusion) relevant f or the epitaxial growth of Ag on Ag(110). Silver has been modeled by m any-body potentials derived in the framework of the second-moment appr oximation to the tight-binding model. Energy barriers for diffusion on the flat surface are found strongly anisotropic. The proximity to ste ps alters these barriers considerably. The adatom descent from islands takes place by different mechanisms depending on the orientation and some of those mechanisms depend strongly on the island size and shape. In particular, the adatom descent at kinks is much easier on small is lands than on large ones. This fact may have a strong influence on the growth character at low temperatures. Finally, the energetics of smal l adatom clusters is presented.