MICROWAVE PLASMA CHARACTERISTICS DURING BIAS-ENHANCED NUCLEATION OF DIAMOND - AN OPTICAL-EMISSION SPECTROSCOPIC STUDY

Citation
Md. Whitfield et al., MICROWAVE PLASMA CHARACTERISTICS DURING BIAS-ENHANCED NUCLEATION OF DIAMOND - AN OPTICAL-EMISSION SPECTROSCOPIC STUDY, Journal of applied physics, 80(7), 1996, pp. 3710-3716
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
80
Issue
7
Year of publication
1996
Pages
3710 - 3716
Database
ISI
SICI code
0021-8979(1996)80:7<3710:MPCDBN>2.0.ZU;2-#
Abstract
A negative bias applied to a nondiamond substrate at the initiation of microwave plasma-enhanced chemical-vapor deposition of thin-film diam ond can lead to diamond nucleation, high crystalline density, and an i mproved level of crystallographic alignment. In this work, optical emi ssion spectroscopy has been used to study changes in the chemical spec ies within the. plasma that occur as a result the applied bias to a tu ngsten substrate. The ratio of C-2 to CH species detected changes cons iderably as does the atomic hydrogen intensity as the bias is applied. Both effects appear to be greatest near the substrate surface. The re sults are discussed in terms of possible origins for the bias-enhanced nucleation process. (C) 1996 American Institute of Physics.