ELECTRICAL-RESISTIVITY OF TIB2 AT ELEVATED PRESSURES AND TEMPERATURES

The electrical resistivity of TiB2 has been measured using a DIA-6 cub ic anvil apparatus at pressures up to 8 GPa and temperatures up to 800 K. The ambient-condition resistivity is determined to be 13.3 (+/-0.9 ) mu Omega cm. The resistivity decreases with increasing pressure, At pressures above 2 GPa, the pressure dependence of the resistivity is a bout -0.36 mu Omega cm/GPa. On heating, the resistivity increases line arly with temperature. The measurements at simultaneously high pressur e (3.2 GPa) and high temperatures yield a temperature dependence of 46 (+/-5) n Omega cm/K for the resistivity. (C) 1996 American Institute of Physics.