Optical and electrical properties of SiGe strain-adjusted superlattice
s have been studied. Diode structures were processed into waveguide ge
ometries to investigate the role of optical confinement and the loweri
ng of cubic symmetry with regards to the polarization properties of in
terband absorption and emission. The polarization anisotropy of tile a
bsorption coefficient suggests that the heavy-hole band of strain-adju
sted Si6Ge4 superlattices is the top valence band. (C) 1996 American I
nstitute of Physics.