OPTICAL ANISOTROPY OF SIGE SUPERLATTICES

Citation
J. Engvall et al., OPTICAL ANISOTROPY OF SIGE SUPERLATTICES, Journal of applied physics, 80(7), 1996, pp. 4012-4018
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
80
Issue
7
Year of publication
1996
Pages
4012 - 4018
Database
ISI
SICI code
0021-8979(1996)80:7<4012:OAOSS>2.0.ZU;2-2
Abstract
Optical and electrical properties of SiGe strain-adjusted superlattice s have been studied. Diode structures were processed into waveguide ge ometries to investigate the role of optical confinement and the loweri ng of cubic symmetry with regards to the polarization properties of in terband absorption and emission. The polarization anisotropy of tile a bsorption coefficient suggests that the heavy-hole band of strain-adju sted Si6Ge4 superlattices is the top valence band. (C) 1996 American I nstitute of Physics.