S. Krishnamurthy et al., NEAR-BAND-EDGE ABSORPTION-SPECTRA OF NARROW-GAP III-V SEMICONDUCTOR ALLOYS, Journal of applied physics, 80(7), 1996, pp. 4045-4048
Near band edge absorption spectra of the narrow-gap semiconductor allo
ys InxT1-xP, InxT1-xAs, and InxT1-xSb were calculated and compared wit
h those of HgxCd1-xTe. To test accuracy, we compared the calculated ab
sorption spectra in GaAs with experimental results and found good agre
ement. Within 50 meV from the absorption edge, the absorption coeffi c
ient of InxT1-xP is found to have about the same magnitude as that in
HgxCd1-xTe and GaAs, whereas that in InxT1-xAs and InxT1-xSb is much s
maller. This result and other merits found from previous studies indic
ate that InxT1-xP has a potential to compete favorably with HgxCd1-xTe
for long-wavelength infrared applications. (C) 1996 American Institut
e of Physics.