NEAR-BAND-EDGE ABSORPTION-SPECTRA OF NARROW-GAP III-V SEMICONDUCTOR ALLOYS

Near band edge absorption spectra of the narrow-gap semiconductor allo ys InxT1-xP, InxT1-xAs, and InxT1-xSb were calculated and compared wit h those of HgxCd1-xTe. To test accuracy, we compared the calculated ab sorption spectra in GaAs with experimental results and found good agre ement. Within 50 meV from the absorption edge, the absorption coeffi c ient of InxT1-xP is found to have about the same magnitude as that in HgxCd1-xTe and GaAs, whereas that in InxT1-xAs and InxT1-xSb is much s maller. This result and other merits found from previous studies indic ate that InxT1-xP has a potential to compete favorably with HgxCd1-xTe for long-wavelength infrared applications. (C) 1996 American Institut e of Physics.