LOW-TEMPERATURE CATALYTIC FORMATION OF SI-BASED METAL-OXIDE-SEMICONDUCTOR STRUCTURE

Si-based metal-oxide-semiconductor structure is formed at temperatures as low as 300 degrees C using the catalytic activity of the platinum (Pt) layer. X-ray photoelectron spectroscopy and transmission electron micrography measurements show that heat treatments of the similar to 5 nm-Pt/similar to 1 nm-chemical oxide/Si(100)] devices at 300 degrees C increase the thickness of the oxide layer to 4-4.5 nm and the oxide layer is present between the Pt layer and the Si substrate, but not o n the Pt surface. It is found that the thin chemical oxide layer effec tively prevents the Pt diffusion and the silicide formation during til e hear treatments. Heat treatments in dry- and wet-oxygen result in ne arly The same oxide thickness. Oxygen atoms (or oxygen ions) produced at the Pt surface are suggested to be a diffusing species through the Pt and silicon oxide layers. (C) 1996 American Institute of Physics.