GROWTH AND CHARACTERIZATION OF MIDINFRARED INGAAS INALAS STRAINED TRIPLE-QUANTUM-WELL LIGHT-EMITTING-DIODES GROWN ON LATTICE-MISMATCHED GAAS SUBSTRATES/

Strained triple-quantum-well In0.9Ga0.1As/In0.8Al0.2As light-emitting diodes were grown on lattice-mismatched GaAs substrates by molecular-b eam epitaxy, The diodes exhibit room-temperature external electrolumin escent light emission at 2.4 mu m with efficiencies up to 6.4x10(-5). The maximum output power at room temperature is 1.85 mu W under pulsed operation at 150 mA, (1 kHz, 50% duty cycle). Although the diodes hav e excellent electrical properties, their optical performance is still found to be limited by the nonradiative Shockley-Read-Hall recombinati on. (C) 1996 American Institute of Physics.