ANNEALING BEHAVIOR AND ATOMIC COMPOSITION OF SUBSTITUTIONAL CARBON-OXYGEN COMPLEXES IN SILICON-CRYSTALS

We investigated the annealing behavior of the infrared-absorption peak s at 1052 and 1099 cm(-1) due to C-O-B complex, and those at 1112 and 1026 cm(-1) due to C-O-C complex. Similar to previous observations [Y. Shirakawa, H. Yamada-Kaneta, and H. Mori, J. Appl. Phys. 77, 41 (1995 )], the formation-dissociation reaction of C-O-B and C-O-C complexes r apidly reaches the quasithermal-equilibrium state at the onset of anne aling. Based upon the mass action law, it is suggested that the format ion of the C-O-B and C-O-C complexes involves one carbon atom and two and three oxygen atoms, respectively. (C) 1996 American Institute of P hysics.