GROUP-VI IMPURITY-RELATED DX CENTERS IN IN0.18GA0.82AS0.28P0.72

Properties of deep levels in S-, Se-, and Te-doped In0.18Ga0.82As0.2P0 .72 grown on GaAs0.61P0.39 substrates by liquid phase epitaxy are stud ied by deep level transient spectroscopy and thermally stimulated capa citance measurements. The donor-related deep levels are observed and t heir activation energies are found to be 0.26, 0.23, and 0.14 eV for S -, Se-, and Te-doped In(0.18)G(0.82)As(0.28)8P(0.72), respectively. Pe rsistent photoconductivity is observed in all the samples doped with t hese impurities. It is clear from these results that the S, Se, and Te donors form DX centers in In0.18Ga0.82As0.28P0.72. (C) 1996 American Institute of Physics.