GROWTH OF C-AXIS ORIENTED GALLIUM NITRIDE THIN-FILMS ON AN AMORPHOUS SUBSTRATE BY THE LIQULD-TARGET PULSED-LASER DEPOSITION TECHNIQUE

Gallium nitride (GaN) thin films with a wurtzite structure were grown on fused silica (FS) substrates by pulsed laser ablation of a liquid g allium target in the presence of ammonia gas. X-ray diffraction measur ement shows a single c-axis orientation for the GaN film grown with a thin (<1000 Angstrom) zinc oxide (ZnO) film as an alignment layer. The re is a great improvement in the surface morphology as well as optical transmission for the GaN film grown on the ZnO buffered FS substrate. The energy band gap obtained from the absorption spectrum is about 3. 45 eV. (C) American Institute of Physics.