EVIDENCE OF ENHANCED EPITAXIAL CRYSTALLIZATION AT LOW-TEMPERATURE BY INELASTIC ELECTRONIC SCATTERING OF MEGA-ELECTRON-VOLT HEAVY-ION-BEAM IRRADIATION - COMMENT

The results on epitaxial crystallization of Si by mega-electron-volt h eavy-ion-beam irradiation recently published by Nakata [J. Appl. Phys. 79, 682 (1996)] can be understood in the framework of the ''point def ect diffusion model.'' It is not necessary to consider inelastic elect ronic scattering effects in order to explain the decrease in the norma lized crystallization rate with increasing nuclear deposited energy. ( C) 1996 American Institute of Physics.