EVIDENCE OF ENHANCED EPITAXIAL CRYSTALLIZATION AT LOW-TEMPERATURE BY INELASTIC ELECTRONIC SCATTERING OF MEGA-ELECTRON-VOLT HEAVY-ION-BEAM IRRADIATION - REPLY

Enhanced epitaxial crystallization by mega-electron-volt (MeV) heavy-i on-beam irradiation cannot be explained only by the diffusion-limited model. The validity of data showing the absence of dose rate effect on MeV ion-beam-induced epitaxial crystallization (IBIEC) rate is examin ed in relation to the self-ion-beam annealing effect in MeV As+-ion-be am irradiation in the crystalline Si substrate. The reliability of the experimental results showing the critical thickness dependence in the diffusion-limited model is discussed in detail. It is pointed out tha t there is room to question the existence of critical thickness. Two g uidelines for constructing an accurate IBIEC model are proposed. (C) 1 996 American Institute of Physics.