EVIDENCE OF ENHANCED EPITAXIAL CRYSTALLIZATION AT LOW-TEMPERATURE BY INELASTIC ELECTRONIC SCATTERING OF MEGA-ELECTRON-VOLT HEAVY-ION-BEAM IRRADIATION - REPLY
J. Nakata, EVIDENCE OF ENHANCED EPITAXIAL CRYSTALLIZATION AT LOW-TEMPERATURE BY INELASTIC ELECTRONIC SCATTERING OF MEGA-ELECTRON-VOLT HEAVY-ION-BEAM IRRADIATION - REPLY, Journal of applied physics, 80(7), 1996, pp. 4237-4239
Enhanced epitaxial crystallization by mega-electron-volt (MeV) heavy-i
on-beam irradiation cannot be explained only by the diffusion-limited
model. The validity of data showing the absence of dose rate effect on
MeV ion-beam-induced epitaxial crystallization (IBIEC) rate is examin
ed in relation to the self-ion-beam annealing effect in MeV As+-ion-be
am irradiation in the crystalline Si substrate. The reliability of the
experimental results showing the critical thickness dependence in the
diffusion-limited model is discussed in detail. It is pointed out tha
t there is room to question the existence of critical thickness. Two g
uidelines for constructing an accurate IBIEC model are proposed. (C) 1
996 American Institute of Physics.