NEW TECHNIQUES AND DEVELOPMENTS IN HIGH-RESOLUTION ELECTRON-MICROSCOPY

High-resolution electron microscopy is often used for the structural a nd elemental analysis of nano-electronics materials. Various recently fabricated nanometer-sized structures, which could not be observed by scanning electron microscopy, have been successfully observed by trans mission electron microscopy (TEM) using the focused ion beam technique to prepare the cross-sections. Two examples of a device cross-section and of the analysis of a giant defect in CZ-Si are described. We also show that electron beam heating in a TEM is useful for in-situ observ ation of intermediate products in chemical reactions and of complicate d processes of crystal growth. In this sense, an electron microscope c an act as a ''nano-space lab'' for advanced materials research.