APPLICATION OF SYNCHROTRON-RADIATION TO SURFACE AND INTERFACE CHARACTERIZATION

Fabrication technology at the nanometer scale to develop advanced devi ces and low-dimensional structures requires atomic-scale control of th in-film growth, selective-area growth, and ultra-fine photolithography . To develop such atomic-scale control techniques, advanced characteri zation at the atomic-scale is needed. We are now investigating surface and interface structures and ways to control growth modes by surface modification, and also trying to develop methods that allow realtime o bservation of thin-film crystal growth by using various methods of adv anced materials analysis that use synchrotron radiation. This report p resents recent results obtained by these techniques for S/GaAs and SrF 2/S/GaAs, Sb/GaAs, and inAs/Se/GaAs, and also describes preliminary re sults from realtime crystal growth observation.