A HIGHLY ACCURATE MESFET MODEL TO PREDICT THE NONLINEAR BEHAVIOR OF ALINEAR POWER-AMPLIFIER

Authors
ROH TM SUH YS KIM YS PARK WS KIM BM
Citation
Tm. Roh et al., A HIGHLY ACCURATE MESFET MODEL TO PREDICT THE NONLINEAR BEHAVIOR OF ALINEAR POWER-AMPLIFIER, Microwave and optical technology letters, 13(4), 1996, pp. 184-186
Citations number
5
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Microwave and optical technology letters → ACNP
ISSN journal
08952477
Volume
13
Issue
4
Year of publication
1996
Pages
184 - 186
Database
ISI
SICI code
0895-2477(1996)13:4<184:AHAMMT>2.0.ZU;2-9
Abstract
A new channel current model to accurately represent I-V dimes has been developed, and its effect on the nonlinear parameters of MESFET model s such as I-ds, C-gs, C-gd, and C-ds has been investigated for lineal power amplifier design. The channel current model should be constructe d from pulsed I-V data at operation bias point and die nonlinear behav ior of a GaAs MESFET is strongly dependent on the C-gs model. (C) 1996 John Wiley & Sons, Inc.