EFFECTIVE INTERBAND G-FACTOR IN DILUTED MAGNETIC SEMICONDUCTOR CD1-XFEXTE

Citation
Xz. Wang et al., EFFECTIVE INTERBAND G-FACTOR IN DILUTED MAGNETIC SEMICONDUCTOR CD1-XFEXTE, Journal of applied physics, 80(8), 1996, pp. 4421-4424
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
80
Issue
8
Year of publication
1996
Pages
4421 - 4424
Database
ISI
SICI code
0021-8979(1996)80:8<4421:EIGIDM>2.0.ZU;2-3
Abstract
The effective interband g factors gamma(Gamma) and gamma(L) at the Gam ma and L points of the Brillouin zone for Cd1-xFexTe with x = 0.01 and 0.04 have been determined in the temperature range of 70-300 K from F araday rotation measurements. The results show that the dominant contr ibution to gamma(Gamma) is due to the sp-d exchange interaction betwee n Fe2+ ions and free carriers, while the intrinsic contribution is dom inant for gamma(L). The exchange interaction integral N-0(beta - alpha ) at the Gamma point has also been obtained. (C) 1996 American Institu te of Physics.