AN ANALYTIC MODEL FOR THE POLYMER GRID TRIODE

Citation
J. Mcelvain et Aj. Heeger, AN ANALYTIC MODEL FOR THE POLYMER GRID TRIODE, Journal of applied physics, 80(8), 1996, pp. 4755-4766
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
80
Issue
8
Year of publication
1996
Pages
4755 - 4766
Database
ISI
SICI code
0021-8979(1996)80:8<4755:AAMFTP>2.0.ZU;2-U
Abstract
The polymer grid triode (PGT) is a novel semiconductor device construc ted using a self-assembling porous conducting polyaniline (PANI) netwo rk placed between two semiconducting polymer layers, and sandwiched be tween metal electrodes. The structure behaves as a three-terminal devi ce capable of current amplification, with the PANI network functioning as the control grid. An analysis of the generalized field-assisted ca rrier injection by tunneling, controlled by the grid voltage, is prese nted to model the charge injection and transport in the PGT. The resul ts are in good agreement with the measured current-voltage characteris tics. Further, an effective diode model for the PGT is introduced, and a simple, intuitive expression for charge transport in the presence o f the grid network is obtained. In the effective diode regime, the cur rent through the PGT is a function of (V-ac-PVag); i.e., I(ac)approxim ate to I(V-ac-PVag) where P is a geometric factor, as required for use in image processing applications. Other application possibilities for the PGT are surveyed, and the limitations of this device when placed in common circuit configurations are discussed. (C) 1996 American Inst itute of Physics.