The polymer grid triode (PGT) is a novel semiconductor device construc
ted using a self-assembling porous conducting polyaniline (PANI) netwo
rk placed between two semiconducting polymer layers, and sandwiched be
tween metal electrodes. The structure behaves as a three-terminal devi
ce capable of current amplification, with the PANI network functioning
as the control grid. An analysis of the generalized field-assisted ca
rrier injection by tunneling, controlled by the grid voltage, is prese
nted to model the charge injection and transport in the PGT. The resul
ts are in good agreement with the measured current-voltage characteris
tics. Further, an effective diode model for the PGT is introduced, and
a simple, intuitive expression for charge transport in the presence o
f the grid network is obtained. In the effective diode regime, the cur
rent through the PGT is a function of (V-ac-PVag); i.e., I(ac)approxim
ate to I(V-ac-PVag) where P is a geometric factor, as required for use
in image processing applications. Other application possibilities for
the PGT are surveyed, and the limitations of this device when placed
in common circuit configurations are discussed. (C) 1996 American Inst
itute of Physics.