ELECTRICAL-PROPERTIES OF LAYER SEMICONDUCTOR P-GASE DOPED WITH CU

Measurements of Hall effect and deep-level transient spectroscopy have been made on Cu-doped p-GaSe. The moderately deep acceptor and shallo w acceptor levels located at 0.13 and 0.04 eV above the valence band a re obtained from the temperature dependence of the hole concentration. The hole-trapping level at 0.14 eV above the valence band is detected by deep-level transient spectroscopy and shows almost the same positi on as the moderately deep acceptor level. We find that the shallow acc eptor level of 0.04 eV is attributed to Cu atoms, whereas the moderate ly deep acceptor level of 0.13 eV is governed by the defects or defect complexes. (C) 1995 American Institute of Physics.