CALCULATION OF DIAMOND CHEMICAL-VAPOR-DEPOSITION REGION IN C-H-O PHASE-DIAGRAM

Thermodynamic calculations of graphite yield at the interaction of gas eous components of the C-H-O system were performed. Their results prov ed to be in satisfactory agreement with experimental data published on the lower concentration boundary of the diamond deposition region, Th e calculations indicate an influence of the substrate temperature, tot al pressure, and concentrations of inert and active additives on this boundary's location. These data confirm an inference that a diamond de position mechanism might include spontaneous growth-etch cycles due to fluctuations of the gas concentrations. (C) 1996 American Institute o f Physics.