GROWTH AND PROPERTIES OF INXGA1-XN ALYGA1-YN MULTIQUANTUM WELLS DEVELOPED BY MOLECULAR-BEAM EPITAXY/

Authors
SINGH R DOPPALAPUDI D MOUSTAKAS TD
Citation
R. Singh et al., GROWTH AND PROPERTIES OF INXGA1-XN ALYGA1-YN MULTIQUANTUM WELLS DEVELOPED BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 69(16), 1996, pp. 2388-2390
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
16
Year of publication
1996
Pages
2388 - 2390
Database
ISI
SICI code
0003-6951(1996)69:16<2388:GAPOIA>2.0.ZU;2-B
Abstract
Ln(0.09)Ga(0.91)N/GaN and In0.35Ga0.65N/Al(0.1)G(0.9)N multiquantum we ll structures (MQW) were grown by molecular beam epitaxy on (0001) sap phire substrates. The thickness of the wells and the barriers were in the range of 80-120 Angstrom. The microstructure of these MQW structur es was investigated by transmission electron microscopy. The room temp erature photoluminescence spectra in these MQW structures peak at 387 and 363 nm with full width at half maximum of 16 and 28 nm, respective ly. (C) 1996 American Institute of Physics.