N-TYPE ZINC PHOSPHIDE GROWN BY MOLECULAR-BEAM EPITAXY

We report on the results of Hall effect and photoluminescence (PL) in n-type Zn3P2 grown by molecular beam epitaxy. The Zn3P2 thin films ind icated n-type conductivity instead of the usual p-type conductivity du e to a strong self-compensation effect with Hall mobility and carrier concentration of 3-7 x 10(3) cm(2)/V s and 3-9x10(10) cm(-3) at room t emperature, respectively, Donor levels of 0.01 and 0.73 eV from the co nduction band were identified by resistivity and Hall effect measureme nts. The PL spectra show donor-acceptor pair emission near 1.41 eV at 20 K ascribed to an acceptor level of 0.26 eV from the valence band. ( C) 1996 American Institute of Physics.