A GENERAL-APPROACH TO THE EPITAXIAL-GROWTH OF RARE-EARTH-TRANSITION-METAL FILMS

Authors
FULLERTON EE SOWERS CH PEARSON JP BADER SD WU XZ LEDERMAN D
Citation
Ee. Fullerton et al., A GENERAL-APPROACH TO THE EPITAXIAL-GROWTH OF RARE-EARTH-TRANSITION-METAL FILMS, Applied physics letters, 69(16), 1996, pp. 2438-2440
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
16
Year of publication
1996
Pages
2438 - 2440
Database
ISI
SICI code
0003-6951(1996)69:16<2438:AGTTEO>2.0.ZU;2-U
Abstract
The growth of epitaxial rare-earth transition-metal thin films is repo rted by magnetron sputtering on single-crystal MgO substrates, The use of epitaxial W buffer layers demonstrates a general approach to contr ol the phase and orientation of the films. Structure and magnetism res ults for SmFe12(001) on W(100) and magnetically hard Sm2Co7 (110) and (001) on W(100) and (110), respectively, are highlighted to illustrate the utility of the approach. (C) 1996 American Institute of Physics.