REDUCTION OF HOT-ELECTRON DEGRADATION IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY DEUTERIUM PROCESSING - COMMENT

Authors
VANDEWALLE CG JACKSON WB
Citation
Cg. Vandewalle et Wb. Jackson, REDUCTION OF HOT-ELECTRON DEGRADATION IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY DEUTERIUM PROCESSING - COMMENT, Applied physics letters, 69(16), 1996, pp. 2441-2441
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
16
Year of publication
1996
Pages
2441 - 2441
Database
ISI
SICI code
0003-6951(1996)69:16<2441:ROHDIM>2.0.ZU;2-I