MICROCRYSTALLINE SILICON FILMS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION USING HELIUM GAS

We have investigated the growth of microcrystalline silicon films by e lectron cyclotron resonance plasma chemical vapor deposition (ECR-PCVD ) using He as the ECR gas at substrate temperatures in the range of 18 0 to 550 degrees C with He to silane ratios (He/SiH4) of 1: 4, and 9. With ratios of 4 and 9, the volume fractions of microcrystalline silic on increase with temperature and exceed 90% at 550 degrees C. To study the role of He plasma; we prepared silicon films using a layer-by-lay er technique and found that long exposure to He plasma changes the str ucture of amorphous silicon to microcrystalline.