POLYSILANE-BASED POLYMER DIODES EMITTING ULTRAVIOLET-LIGHT

We show for the first time that a thin film of the organic-inorganic h ybrid polymer polysilane can be used as an active element in a light-e mitting diode with a large active area that generates ultraviolet ligh t at low temperature. The thin-film device emitted 3.35 eV (370 nm) li ght with moderate efficiency (0.01-0.06%) at temperatures below 210 K. The origin of the emission was assigned to the B-1(u) exciton on the one-dimensional silicon chain. The reason for the decrease of the emis sion efficiency above 50 K was discussed in relation to the order-diso rder phase transition in the polysilane thin film.