DEPTH-SENSITIVE X-RAY-SCATTERING TOPOGRAPHIC OBSERVATION OF INAS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS

Depth-sensitive X-ray scattering topography using a microbeam was carr ied out for a Be-doped InAs layer, which was epitaxially grown to a th ickness of 1.0 mu m by MBE (molecular beam epitaxy) ori a CrO-doped Ga As substrate with (001) surface orientation. Throughout the X-ray expe riments, Co K alpha radiation was used. The experimental results show that the depth sensitivity depends on the die-action index, (004), (00 2) or (006). Although the FWHM of the X-ray diffraction rocking curve is large, the depth sensitivity for defects on the topographs has the same tendency as the penetration depth calculated by dynamical theory.