STRUCTURE AND ELECTRICAL CHARACTERISTICS OF ICBD C-60 FILMS

Authors
SHI Y XIONG CM WANG XS LEI CH GUO HX FAN XJ
Citation
Y. Shi et al., STRUCTURE AND ELECTRICAL CHARACTERISTICS OF ICBD C-60 FILMS, Applied physics A: Materials science & processing, 63(4), 1996, pp. 353-357
Citations number
26
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
63
Issue
4
Year of publication
1996
Pages
353 - 357
Database
ISI
SICI code
0947-8396(1996)63:4<353:SAECOI>2.0.ZU;2-#
Abstract
Polycrystalline C-60 films are deposited onto a variety of substrates by ionized cluster beam deposition (ICED) technique. The structure of the ICED C-60 films are studied by transmission electron microscopy (T EM). The electrical characteristics of the ICED C-60 films on silicon substrates are investigated by current-voltage (I-V) measurements. The ICED C-60/p-Si and C-60/n-Si heterostructures show strong current rec tification, which is analyzed using band theory.