REALIZATION OF SILICON QUANTUM WIRES BY SELECTIVE CHEMICAL ETCHING AND THERMAL-OXIDATION

Ultra-fine silicon quantum wires with SiO2 boundaries were successfull y fabricated by combining SiGe/Si heteroepitaxy, selective chemical et ching and subsequent thermal oxidation. The results are observed by sc anning electron microscopy. The present method provides a very control lable way to fabricate ultra-fine silicon quantum wires, which is full y compatible with silicon microelectronic technology. As one of the ke y processes of controlling the lateral dimensions of silicon quantum w ires, the wet oxidation of silicon wires has been investigated, self-l imiting wet oxidation phenomenon in silicon wires is observed. The cha racteristic of the oxidation retardation of silicon wires is discussed .