(001) TEXTURED PBTIO3 THIN-FILMS GROWN ON REDOPING N-SI BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION UNDER REDUCED PRESSURE

(001) textured PbTiO3 thin films have been deposited on (001) redoping n-Si substrates by metalorgnic chemical vapor deposition (MOCVD) unde r reduced pressure, and the film ferroelectricity has been measured us ing the substrate as bottom electrode directly. Besides this investiga tion, a set of analysis including AFM surface morphology, SEM cross se ction morphology, electron-probe element analysis, XRD theta-2 theta s can and high temperature X-ray diffraction have been carried out to st udy the microstructure and phase transition process of the PbTiO3 thin film.