ELECTROCHEMICAL FABRICATION OF A NOVEL CONDUCTING POLYTHIOPHENE FILM JUNCTION

A compact conductive polythiophene (PT) film junction was prepared by potential controlled electrochemical doping after electropolymerizatio n of thiophene. The polythiophene film was cation-doped on one side, w hile its other side was anion-doped, which resulted in a polythiophene p-n junction film diode. The free-standing polythiophene film junctio n diode was flexible and was 1.5 times stronger than aluminum metal. A fter treatment by a strong electric field, the polythiophene p-n junct ion exhibits a novel electric property like an intelligent electric sw itch.