LOW PHASE NOISE MILLIMETER-WAVE FREQUENCY SOURCES USING INP-BASED HBTMMIC TECHNOLOGY

Authors
WANG H CHANG KW TRAN LT COWLES JC BLOCK TR LIN EW DOW GS OKI AK STREIT DC ALLEN BR
Citation
H. Wang et al., LOW PHASE NOISE MILLIMETER-WAVE FREQUENCY SOURCES USING INP-BASED HBTMMIC TECHNOLOGY, IEEE journal of solid-state circuits, 31(10), 1996, pp. 1419-1425
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE journal of solid-state circuits → ACNP
ISSN journal
00189200
Volume
31
Issue
10
Year of publication
1996
Pages
1419 - 1425
Database
ISI
SICI code
0018-9200(1996)31:10<1419:LPNMFS>2.0.ZU;2-A
Abstract
A family of millimeter-wave sources based on InP heterojunction bipola r transistor (HBT) monolithic microwave/millimeter-wave integrated cir cuit (MMIC) technology has been developed, These sources include 40-GH z, 46-GHz, 62-GHz MMIC fundamental mode oscillators, and a 95-GHz freq uency source module using a 23.8-GHz InP HBT MIMIC dielectric resonato r oscillator (DRO) in conjunction with a GaAs-based high electron mobi lity transistor (HEMT) MMIC frequency quadrupler and W-band output amp lifiers. Good phase noise performance was achieved due to the low 1/f noise of the InP-based HBT devices, To our knowledge, this is the firs t demonstration of millimeter-wave sources using InP-based HBT MMIC's.