This paper details the VBIC95 bipolar junction transistor (BJT) model.
The model was developed as an industry standard replacement for the S
PICE Gummel-Poon (SGP) model, to improve deficiencies of the SGP model
that have become apparent over time because of the advances in BJT pr
ocess technology, VBIC95 is still based on the Gummel-Poon formulation
, and thus can degenerate to be similar to the familiar SGP model, How
ever, it includes improved modeling of the Early effect, quasi-saturat
ion, substrate and oxide parasitics, avalanche multiplication, and tem
perature behavior that can be invoked selectively based on model param
eter values.