HIGH-RESOLUTION ANGLE-RESOLVED PHOTOEMISSION SPECTROSCOPY OF CEBI

High-resolution angle-resolved photoemission spectroscopy (HR-ARPES) h as been performed on a CeBi single crystal to study the complicated el ectronic structure near the Fermi level (E(F)). The experimental resul t was compared with the band-structure calculation based on the p-f mi xing model as well as the de Haas-van Alphen (dHvA) effect measurement s. It was found that the overall feature of the valence band shows a r emarkably good agreement between the experiment and the calculation, s uggesting the essential validity of the p-f mixing model. HR-ARPES mea surement near E(F) has established the existence of a small electron p ocket centered at the M point in the Brillouin zone, supporting the ba nd calculation and the dHvA measurement. HR-ARPES spectra around the G amma point show some dispersive bands near E(F) indicative of a hole p ocket centered at the Gamma point, though it was not so clearly resolv ed as the electron pocket due to close proximity of individual bands. These results are consistent with the semimetallic nature of CeBi. The observed quantitative discrepancy between the experiment and the calc ulation is discussed.