SIMULATED MAGNETORESISTIVE BEHAVIOR OF GEOMETRICALLY ASYMMETRIC SPIN VALVES

Authors
OTI JO CROSS RW RUSSEK SE KIM YK
Citation
Jo. Oti et al., SIMULATED MAGNETORESISTIVE BEHAVIOR OF GEOMETRICALLY ASYMMETRIC SPIN VALVES, IEEE transactions on magnetics, 32(5), 1996, pp. 4606-4608
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE transactions on magnetics → ACNP
ISSN journal
00189464
Volume
32
Issue
5
Year of publication
1996
Part
2
Pages
4606 - 4608
Database
ISI
SICI code
0018-9464(1996)32:5<4606:SMBOGA>2.0.ZU;2-U
Abstract
A semi-analytical micromagnetic model is used to study how the magneto resistive (MR) response is affected by uneven geometries in NiFe/Cu/Ni Fe spin-valve devices. Devices with unequal stripe heights and thickne sses of the magnetic layers are studied. The calculated devices are 4 inn long, pinned by a transverse field of 16 kA/m and have nonmagnetic spacer thicknesses of 4 nm. Stripe heights are varied from 0.5 mu m t o 2 mu m and magnetic-layer thicknesses from 3 nm to 6 nm. Device resp onses are analyzed and used to indicate how optimal device geometries may be selected.