A methodology for identifying essential magnetoresistive parameters of
spin valves is presented. The method uses a formulation of the magnet
oresistance of a magnetic layer that incorporates the magnetic and tra
nsport properties of the device in a phenomenological way. Experimenta
l data are used in conjunction with the formulation to obtain magnetor
esistive parameters. The method is shown to accurately characterize a
set of NiFe/Cu/NiFe spin-valve devices.