ON THE POTENTIAL DISTRIBUTION IN A THIN SEMICONDUCTOR LAYER

In the investigation of electronic phenomena in thin semiconductor lay ers using admittance or modulated admittance measurement techniques, a nd also in the study of Schottky-barrier field transistors, one needs to know, as a rule, the analytic relation between the potential on the outer and inner surfaces of the semiconductor layer. Relatively simpl e approximations are proposed. These approximations describe the poten tial distribution in a thin monopolar semiconductor layer with suffici ent accuracy, facilitating tile calculation of the analytic relation b etween potentials on the inner surface of the layer and the potentials on its outer surface. (C) 1996 American Institute of Physics.