DIAGNOSTICS OF HETEROSTRUCTURES WITH QUANTUM-WELLS BY THE METHOD OF CAPACITIVE PHOTOVOLTAGE SPECTROSCOPY

Some peculiarities of the capacitive photovoltage and photoluminescenc e of GaAs/InGaAs heterostructures with single and double asymmetric qu antum wells associated with size quantization and the effect of alloy composition on the spectra are investigated. The dependence of the pho tosensitivity and the quantum efficiency on the quantum-well parameter s and location of the quantum wells relative to the surface barrier is obtained. Capacitive photovoltage spectroscopy has been shown to be a n effective method for the diagnostics of the heterostructures of rela tively shallow quantum wells. (C) 1996 American Institute of Physics.