ELECTRICAL-PROPERTIES OF MIS STRUCTURES WITH A MAGNETIC SEMICONDUCTORFILM SERVING AS THE INSULATOR

The behavior of the capacitance of a metal-insulator-semiconductor str ucture with a film of the magnetic semiconductor Eu1-xSmxO as the insu lator is considered as a function of constant magnetic field and illum ination at T=77 K. The increase in the capacitance with illumination a cid its decrease in a magnetic field are discussed from the point of v iew of a correlation between the processes of generation of free charg e carrier (in the film and in the near-surface region of the semicondu ctor) and their drift through the insulator under certain conditions. (C) 1996 American Institute of Physics.