6H-SIC DIODES FABRICATED BY COMBINED CHEMICAL-VAPOR-DEPOSITION AND SUBLIMATION EPITAXY

Authors
LEBEDEV AA MALTSEV AA POLETAEV NK RASTEGAEVA MG SAVKINA NS STRELCHUK AM CHELNOKOV VE
Citation
Aa. Lebedev et al., 6H-SIC DIODES FABRICATED BY COMBINED CHEMICAL-VAPOR-DEPOSITION AND SUBLIMATION EPITAXY, Semiconductors, 30(10), 1996, pp. 944-945
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
30
Issue
10
Year of publication
1996
Pages
944 - 945
Database
ISI
SICI code
1063-7826(1996)30:10<944:6DFBCC>2.0.ZU;2-W
Abstract
The use of a combination of sublimation epitaxy and chemical vapor dep osition for fabrication of 6H-SiC diodes is reported. The parameters o f tile ''combination'' structures are found to be no worse than and, i n some cases, to exceed those of diodes prepared by one of these metho ds. (C) 1996 American Institute of Physics.