THERMALLY-INDUCED DEPOLARIZATION CURRENTS IN CAIN2S4 SINGLE-CRYSTAL

Citation
Bg. Tagiev et al., THERMALLY-INDUCED DEPOLARIZATION CURRENTS IN CAIN2S4 SINGLE-CRYSTAL, Semiconductors, 30(10), 1996, pp. 946-948
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
30
Issue
10
Year of publication
1996
Pages
946 - 948
Database
ISI
SICI code
1063-7826(1996)30:10<946:TDCICS>2.0.ZU;2-F
Abstract
For the first time results are presented from a study of thermally ind uced depolarization currents in CaIn2S4 single crystal. Thermally indu ced depolarization spectra of CaIn2S4 structures are measured at T = 9 9 K for different heating rates, polarization times, and delay times a fter switchoff of the electric field and before measurement of the sho rt circuit current. The principal parameters of the trapping centers a re determined: embedding depth E(t)=O.33 eV, capture cross section S=1 0(-18) cm(2), frequency factor v=10(8) s(-1), and trap concentration N -t = 10(15)-10(16) cm(-3). It is found that in single crystal CaIn2S4 there is-a bimolecular. mechanism with strong multiple trapping. (C) 1 996 American Institute of Physics.